Product Summary

The STP80NF10 is a Power MOSFET realized with STMicro-electronics unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. The STP80NF10 is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. The applications of the STP80NF10 include high-efficiency dc-dc converters and ups and motor control.

Parametrics

STP80NF10 absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 100 V; (2)VDGR, Drain-gate Voltage (RGS = 20 kΩ): 100 V; (3)VGS, Gate- source Voltage: ±20 V; (4)ID, Drain Current (continuous) at TC = 25℃: 80 38 A; (5)ID, Drain Current (continuous) at TC = 100℃: 66 27 A; (6)IDM, Drain Current (pulsed): 320A; (7)PTOT, Total Dissipation at TC = 25℃: 300W; (8)Derating Factor: 2W/℃; (9)dv/dt, Peak Diode Recovery voltage slope: 9 V/ns; (10)EAS, Single Pulse Avalanche Energy: 360 mJ; (11)Tstg, Storage Temperature: – 55 to 175℃; (12)Tj, Max. Operating Junction Temperature: -55 to 175℃.

Features

STP80NF10 features: (1)typical RDS(on) = 0.012Ω; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)Application oriented characterization.

Diagrams

STP80NF10 internal schematic diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP80NF10
STP80NF10
STMicroelectronics
MOSFET N-Ch 100 Volt 80 Amp
Data Sheet
0-1: $1.76
1-10: $1.47
10-100: $1.28
100-250: $1.13
STP80NF10FP
STP80NF10FP
STMicroelectronics
MOSFET N Ch 100V 0.012 Ohm 30A
Data Sheet
0-1: $1.83
1-10: $1.51
10-100: $1.35
100-250: $1.21