Product Summary

The STP11NK50Z is an N-CHANNEL SuperMESH Power MOSFET. The STP11NK50Z is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complement ST full range of high voltage MOSFET including revolutionary MDmesh products. The applications of the STP11NK50Z include high current, high speed switching, ideal for off-line power supplies, adaptors and PFC, lighting.

Parametrics

STP11NK50ZFP absolute maximum ratings: (1)Drain-source Voltage (VGS = 0), VDS: 500 V; (2)Drain-gate Voltage (RGS = 20 kW), VDGR: 500 V; (3)Gate- source Voltage, VGS: ±30 V; (4)Drain Current (continuous) at TC = 25℃, ID: 10A; (5)Drain Current (continuous) at TC = 100℃, ID: 6.3A; (6)Drain Current (pulsed), IDM: 40A; (7)Total Dissipation at TC = 25℃, PTOT: 30 W; (8)Derating Factor: 0.24 W/℃; (9)Gate source ESD(HBM-C=100pF, R=1.5KW), VESD(G-S): 4000 V; (10)Peak Diode Recovery voltage slope, dv/dt: 4.5 V/ns; (11)Insulation Withstand Voltage (DC), Viso: 2500 V; (12)Operating Junction Temperature, Tj: -55 to 150℃; (13)Storage Temperature, Tstg: -55 to 150℃.

Features

STP11NK50ZFP features: (1)typical RDS(on) = 0.48 W; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility ; (7)add suffix “T4” for ordering in tape & reel (d2pak version).

Diagrams

STP11NK50ZFP circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP11NK50Z
STP11NK50Z
STMicroelectronics
MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH
Data Sheet
0-580: $0.97
580-1000: $0.80
1000-2000: $0.74
2000-5000: $0.71
STP11NK50ZFP
STP11NK50ZFP
STMicroelectronics
MOSFET N-channel 500 V Zener SuperMESH
Data Sheet
0-1: $1.16
1-10: $0.93
10-100: $0.84
100-250: $0.74