(China (Mainland))
Product Summary
The IRF830A is a HEXFET Power MOSFET. The applications of the IRF830A are: Switch Mode Power Supply ( SMPS ); Uninterruptable Power Supply; High speed power switching.
Parametrics
IRF830A absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 5.0A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 3.2A; (3)IDM Pulsed Drain Current: 20; (4)PD @TC = 25℃ Power Dissipation: 74 W; (5)Linear Derating Factor: 0.59 W/℃; (6)VGS Gate-to-Source Voltage: ± 30 V; (7)dv/dt Peak Diode Recovery dv/dt: 5.3 V/ns; (8)TJ Operating Junction and: -55 to + 150℃; (9)TSTG Storage Temperature Range: -55 to + 150℃; (10)Soldering Temperature, for 10 seconds(1.6mm from case): 300℃; (11)Mounting torqe, 6-32 or M3 screw: 10 lbf.in (1.1N.m).
Features
IRF830A features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and dynamic dv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Effective Coss specified.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRF830A |
Vishay/Siliconix |
MOSFET N-Chan 500V 5.0 Amp |
Data Sheet |
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IRF830A, SiHF830A |
Other |
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Data Sheet |
Negotiable |
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IRF830APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 5.0 Amp |
Data Sheet |
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IRF830ALPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 5.0 Amp |
Data Sheet |
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IRF830AL |
Vishay/Siliconix |
MOSFET N-Chan 500V 5.0 Amp |
Data Sheet |
Negotiable |
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IRF830AS |
Vishay/Siliconix |
MOSFET N-Chan 500V 5.0 Amp |
Data Sheet |
Negotiable |
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IRF830ASPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 5.0 Amp |
Data Sheet |
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IRF830ASTRLPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 5.0 Amp |
Data Sheet |
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