(China (Mainland))
Product Summary
The FM25V05-GTR is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. The FM25V05-GTR provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.
Parametrics
FM25V05-GTR absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +4.5V ; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +4.5V; (3)and VIN < VDD+1.0V; (4)TSTG, Storage Temperature: -55 to + 125℃; (5)TLEAD, Lead Temperature (Soldering, 10 seconds): 260℃; (6)VESD, Electrostatic Discharge Voltage: Human Body Model (AEC-Q100-002 Rev. E): 4kV;Charged Device Model (AEC-Q100-011 Rev. B): 1.25kV; Machine Model (AEC-Q100-003 Rev. E): 200V; (7)Package Moisture Sensitivity Level: MSL-1.
Features
FM25V05-GTR features: (1)512K bit Ferroelectric Nonvolatile RAM: Organized as 65,536 x 8 bits; High Endurance 100 Trillion (1014) Read/Writes; 10 Year Data Retention; NoDelay Writes; Advanced High-Reliability Ferroelectric Process ; (2)Very Fast Serial Peripheral Interface - SPI: Up to 40 MHz Frequency; Direct Hardware Replacement for Serial Flash; SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) ; (3)Write Protection Scheme: Hardware Protection; Software Protection ; (4)Device ID and Serial Number: Device ID reads out Manufacturer ID & Part ID; Unique Serial Number; (5)Low Voltage, Low Power: Low Voltage Operation 2.0V – 3.6V; 90 μA Standby Current (typ.); 5 μA Sleep Mode Current (typ.) ; (6)Industry Standard Configurations: Industrial Temperature -40 to +85℃; 8-pin Green/RoHS SOIC Package.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FM25V05-GTR |
Ramtron |
F-RAM 512K (64KX8) 3.3V F-RAM |
Data Sheet |
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