(China (Mainland))
Product Summary
The FDP20N50F is an N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDP20N50F is well suited for high efficient switching mode power supplies and active power factor correction.
Parametrics
FDP20N50F absolute maximum ratings: (1)VDSS, Drain to Source Voltage: 500 V; (2)VGSS, Gate to Source Voltage: ±30 V; (3)ID, drain current, continuous: 20A at Tc=25℃; 12.9A at Tc=100℃ ; (4)IDM, drain current, pulsed: 80A; (5)EAS, Single Pulsed Avalanche Energy: 1110 mJ; (6)IAR, Avalanche Current: 20 A; (7)EAR, Repetitive Avalanche Energy: 25 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD, Power Dissipation: 250W; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds: 300℃.
Features
FDP20N50F features: (1)RDS(on) = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A; (2)Low gate charge ( Typ. 50nC); (3)Low Crss ( Typ. 27pF); (4)Fast reverse recovery switching of built-in diode; (5)Fast switching; (6)100% avalanche tested; (7)Improve dv/dt capability; (8)RoHS compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FDP20N50F |
Fairchild Semiconductor |
MOSFET 500V N-Channel |
Data Sheet |
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